| 摘要 |
<p>[Summary] [Problems] Providing a method of manufacturing a resistance change element capable of reducing the amount of current per cell, as compared with the conventional one. [Means of solving] In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element 71, a transistor T, interlayer insulating films 61, 65, and W plugs 62a, 62b, 65 and the like are formed on a semiconductor substrate 50. Thereafter, a Pt film 67 serving as a lower electrode of the resist change element 71 is formed and a transition metal film (Ni film) 68 is formed on the Pt film 67. After that, the surface of the transition metal film 68 is oxidized to form a transition metal oxide film 69 and a Pt film 70 serving as an upper electrode is formed on the transition metal oxide film 69.</p> |
