| 摘要 |
<p>The present invention provides a process for the preparation of a device comprising a transition metal oxide doped interface between an anode and a semiconducting hole transport layer, comprising the steps of depositing a solution comprising a precursor for a metal oxide layer on said anode, drying and optionally annealing the deposited solution to form a solid layer precursor, depositing a solution of said semiconducting hole transport layer material onto the solid layer, and optionally annealing thermally the resulting product to give the desired device having transition metal oxide at the interface between said anode and said semiconducting hole transport layer; together with a device obtainable by the process according to the invention.</p> |
