| 摘要 |
<p>A method for forming an overlay vernier is provided to prevent a reverse loading effect and to improve an etching of a vernier by inserting a segment type pattern and a scattering bar pattern to a photosensitive pattern. An interlayer dielectric film(14) is formed on a semiconductor substrate(10) including a field dielectric film(12). A photosensitive film is coated on the interlayer dielectric film. A photosensitive pattern(16) is formed by performing an exposure process and a developing process about the photosensitive film. A vernier of a trench of a strip-like shape is formed by etching the interlayer dielectric film. The photosensitive pattern includes a segment type pattern(18) and a scattering bar pattern(20) inside the trench of the strip-like shape. A line width of the trench is 0 ~ 4um. A line width of the segment type pattern is 0 ~ 3um.</p> |
