| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a gallium nitride semiconductor device capable of easily preparing a vertical element where current flows in the thickness direction of a substrate regardless of the resistance of a gallium nitride growth layer and a buffer layer. SOLUTION: The method of manufacturing a gallium nitride semiconductor device includes the steps of forming a silicon substrate 1, buffer layers 2, 3 formed on the silicon substrate 1, and gallium nitride semiconductor layers 4, 5 on the buffer layers 2, 3, of forming a trench 12 reaching the depth of the gallium nitride semiconductor layer 4 through the silicon substrate 1 and the buffer layer 2 from the backside of the silicon substrate 1, and of coating the inner surface of the trench and the backside of the silicon substrate 1 with a metal film. COPYRIGHT: (C)2009,JPO&INPIT |
