Photodetector element

摘要

The element has a first medium (3) arranged on one side of a thin semiconductor layer (1) whose index (ns) is greater than index (n1) of the medium, where the medium is transparent to wavelength. A second medium or layer has a high reflective region (5) that is arranged on another side of the semiconductor layer. The second medium has an index that is less than the index of the semiconductor layer. A third medium (7) is arranged on both sides of the region, and has an index greater than the index of the second medium. The third medium forms a reflective interface with the second medium.