Method for manufacturing a mono-crystalline layer of germanium or aluminium on a substrate

摘要

The present invention is related to a method for growing a layer of a mono-crystalline material such as germanium on a substrate comprising
- loading a substrate having an exposed area made of a first mono-crystalline material in a process chamber,
- supplying a beam of neutral species of a second material towards the substrate in the presence of a diffusion limiting gas, such that the pressure in the process chamber is between 1x10 -6 torr and 1x10 -4 torr, so that the neutral species of the second material are adsorbed on the exposed area, thereby growing a mono-crystalline layer of said second material overlying and in contact with the first mono-crystalline material
wherein said diffusion limiting gas is a non-reactive gas.