Method of controlling stress in gallium nitride films deposited on substrates

摘要

A field-effect transistor is described, and comprises gallium nitride on a silicon substrate. The transistor has at least one of a saturation current per unit gate width of the field-effect transistor of at least 525 mA/mm, a saturation current of the field-effect transistor of at least 25 mA, and a transconductance of the field-effect transistor of at least 5 mS.