发明名称 |
Dual metal gate self-aligned integration |
摘要 |
A semiconductor structure including at least one n-type field effect transistor (nFET) and at least one p-type field effect transistor (pFET) that both include a metal gate having nFET behavior and pFET behavior, respectively, without including an upper polysilicon gate electrode is provided. The present invention also provides a method of fabricating such a semiconductor structure.
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申请公布号 |
US7872317(B2) |
申请公布日期 |
2011.01.18 |
申请号 |
US20090508177 |
申请日期 |
2009.07.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CALLEGARI ALESSANDRO C.;CHUDZIK MICHAEL P.;DORIS BRUCE B.;NARAYANAN VIJAY;PARUCHURI VAMSI K.;STEEN MICHELLE L. |
分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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