发明名称 |
Semiconductor device with reduced resistance of bit lines and method for manufacturing the same |
摘要 |
A semiconductor device comprises buried bit lines which are formed to be brought into contact with drain areas of vertical pillar transistors. The buried bit lines are arranged along a first direction in a silicon substrate. The buried bit lines are formed of epi-silicon to reduce the resistance of the buried bit lines.
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申请公布号 |
US7871887(B2) |
申请公布日期 |
2011.01.18 |
申请号 |
US20080137865 |
申请日期 |
2008.06.12 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM KYUNG DO;BAEK SEUNG JOO |
分类号 |
H01L21/336;H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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