MULTI-LAYER FABRICATION TECHNOLOGY FOF MMICS(MICROWAVE MONOLITHIC INTEGRATED CIRCUITS)

摘要

PURPOSE: A multi-layered process method for manufacturing the high frequency single integrated circuit is provided to manufacture the high frequency single integrated circuit with small area by forming the active and passive devices and connecting with the minimum length of connection line. CONSTITUTION: A p-type ohmic metal layer(301) and a n-type ohmic metal layer are deposited on a semiconductor substrate(303). A first dielectric layer(307) is spread on the top of the p-type ohmic metal layer or the n-type ohmic metal layer. A first metal(308) is deposited on the top of the p-type ohmic metal layer or the n-type ohmic metal layer and first poles(302, 306).