发明名称 |
Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern |
摘要 |
Provided is a method for forming a resist lower layer material for use in a multilayer resist process, especially two-layer resist process or three-layer resist process, having a function of neutralizing an amine contaminant from a substrate, thereby reducing a harmful effect such as trailing skirts of a resist pattern of an upper layer resist. Specifically, there is provided a material for forming a lower layer of a chemically amplified photoresist layer comprising a crosslinkable polymer and a thermal acid generator that can generate an acid by heating at 100° C. or greater and is represented by the general formula (1a): R1CF2SO3−(R2)4N+  (1a), as well as a resist lower layer substrate comprising a resist lower layer formed using said material.
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申请公布号 |
US7871761(B2) |
申请公布日期 |
2011.01.18 |
申请号 |
US20070881761 |
申请日期 |
2007.07.27 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HATAKEYAMA JUN;FUJII TOSHIHIKO;OHSAWA YOUICHI |
分类号 |
G03F1/90;G03F7/26;G03F7/095 |
主分类号 |
G03F1/90 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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