发明名称 ONE-TIME PROGRAMMABLE(OTP) MEMORY CELL AND OTP MEMORY DEVICE FOR MULTI-BIT PROGRAM
摘要 The present invention relates to a one-time programmable (OTP) memory cell using a multi-bit program and an OTP memory apparatus thereof. The OTP memory apparatus comprises a cell array and a switching circuit. The cell array includes OTP memory cells which are separately connected to multiple bit lines, multiple voltage word lines, and multiple reading word lines. The switching circuit detects a program state of the OTP cells and blocks current flowing from the multiple voltage word lines to the bit lines through the OTP memory cells based on the detected program state. By blocking leakage current flowing through an antifuse of which a program is completed through the switching circuit, voltage drop of the voltage word lines can be reduced and a multi-bit program which simultaneously programming the multiple bits can be effectively performed.
申请公布号 KR20160062857(A) 申请公布日期 2016.06.03
申请号 KR20140166012 申请日期 2014.11.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JOON HYUNG;KWON, OH KYUM
分类号 G11C17/08;H01L27/112 主分类号 G11C17/08
代理机构 代理人
主权项
地址