发明名称 |
Methods and systems for forming at least one dielectric layer |
摘要 |
A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.
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申请公布号 |
US7871926(B2) |
申请公布日期 |
2011.01.18 |
申请号 |
US20070876649 |
申请日期 |
2007.10.22 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
XIA LI-QUN;BALSEANU MIHAELA;NGUYEN VICTOR;WITTY DEREK R.;M'SAAD HICHEM;YANG HAICHUN;LU XINLIANG;KAO CHIEN-TEH;CHANG MEI |
分类号 |
H01L21/4763;H01L21/31 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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