发明名称 Methods and systems for forming at least one dielectric layer
摘要 A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.
申请公布号 US7871926(B2) 申请公布日期 2011.01.18
申请号 US20070876649 申请日期 2007.10.22
申请人 APPLIED MATERIALS, INC. 发明人 XIA LI-QUN;BALSEANU MIHAELA;NGUYEN VICTOR;WITTY DEREK R.;M'SAAD HICHEM;YANG HAICHUN;LU XINLIANG;KAO CHIEN-TEH;CHANG MEI
分类号 H01L21/4763;H01L21/31 主分类号 H01L21/4763
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