发明名称 Methods for fabricating semiconductor device structures
摘要 Methods for fabricating semiconductor device structures are disclosed. In some embodiments, methods for fabricating semiconductor device structures may comprising forming at least one raised element on a surface of a substrate, the at least one raised element including sloped sides and a peak, aligning a strip comprising conductive material at least partially over the at least one raised element, and at least partially securing the strip to a surface of the at least one raised element and the surface of the substrate.
申请公布号 US7871911(B2) 申请公布日期 2011.01.18
申请号 US20100776018 申请日期 2010.05.07
申请人 MICRON TECHNOLOGY, INC. 发明人 FORBES LEONARD
分类号 H01L21/3205 主分类号 H01L21/3205
代理机构 代理人
主权项
地址