发明名称 Methods of forming multi-chip semiconductor substrates
摘要 Methods of forming multi-chip semiconductor substrates include forming a first plurality of dicing streets in a first surface of a first semiconductor wafer having a first plurality of bonding sites thereon and forming a second plurality of dicing streets in a first surface of a second semiconductor wafer having a second plurality of bonding sites thereon. The first surfaces of the first and second semiconductor wafers are bonded together so that the first plurality of dicing streets are aligned with the second plurality of dicing streets and the first plurality of bonding sites are matingly received and permanently affixed within the second plurality of bonding sites. A plurality of bonded pairs of semiconductor chips are then formed by planarizing the second surface of the second semiconductor wafer until the second plurality of dicing streets are exposed.
申请公布号 US7871857(B1) 申请公布日期 2011.01.18
申请号 US20080240292 申请日期 2008.09.29
申请人 INTEGRATED DEVICE TECHNOLOGY, INC. 发明人 LEI KUOLUNG;BHUGRA HARMEET
分类号 H01L21/00;H01L23/02;H05K1/14 主分类号 H01L21/00
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