发明名称 |
Vertical gallium nitride semiconductor device and epitaxial substrate |
摘要 |
Affords epitaxial substrates for vertical gallium nitride semiconductor devices that have a structure in which a gallium nitride film of n-type having a desired low carrier concentration can be provided on a gallium nitride substrate of n type. A gallium nitride epitaxial film (65) is provided on a gallium nitride substrate (63). A layer region (67) is provided in the gallium nitride substrate (63) and the gallium nitride epitaxial film (65). An interface between the gallium nitride substrate (43) and the gallium nitride epitaxial film (65) is positioned in the layer region (67). In the layer region (67), a peak value of donor impurity along an axis from the gallium nitride substrate (63) to the gallium nitride epitaxial film (65) is 1×1018 cm−3 or more. The donor impurity is at least either silicon or germanium.
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申请公布号 |
US7872285(B2) |
申请公布日期 |
2011.01.18 |
申请号 |
US20060569798 |
申请日期 |
2006.03.01 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HASHIMOTO SHIN;KIYAMA MAKOTO;TANABE TATSUYA;MIURA KOUHEI;SAKURADA TAKASHI |
分类号 |
H01L29/66;H01L29/20;H01L29/207 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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