发明名称 |
Semiconductor structure and system for fabricating an integrated circuit chip |
摘要 |
A semiconductor structure and a system for fabricating an integrated circuit chip. The semiconductor structure includes: a buried oxide layer on a semiconductor wafer; a thin fin structure on the buried oxide layer, wherein the thin fin structure includes a first hard mask on a semiconductor fin, wherein the semiconductor fin is disposed between the first hard mask and a surface of the buried oxide layer; and a thick mesa structure on the buried oxide layer, and wherein the thick mesa structure includes a semiconductor mesa. The system for fabricating an integrated circuit chip enables: providing a buried oxide layer on and in direct mechanical contact with a semiconductor wafer; and concurrently forming at least one fin-type field effect transistor and at least one thick-body device on the buried oxide layer.
|
申请公布号 |
US7872310(B2) |
申请公布日期 |
2011.01.18 |
申请号 |
US20090348344 |
申请日期 |
2009.01.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABADEER WAGDI W.;BROWN JEFFREY S.;FRIED DAVID M.;GAUTHIER, JR. ROBERT J.;NOWAK EDWARD J.;RANKIN JED H.;TONTI WILLIAM R. |
分类号 |
H01L27/08;H01L29/772;H01L21/336;H01L21/8234;H01L21/8238;H01L21/84;H01L27/088;H01L27/092;H01L27/12;H01L29/49;H01L29/786 |
主分类号 |
H01L27/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|