发明名称 |
Method and apparatus for mobility enhancement in a semiconductor device |
摘要 |
A method and apparatus is presented that provides mobility enhancement in the channel region of a transistor. In one embodiment, a channel region (18) is formed over a substrate that is bi-axially stressed. Source (30) and drain (32) regions are formed over the substrate. The source and drain regions provide an additional uni-axial stress to the bi-axially stressed channel region. The uni-axial stress and the bi-axially stress are both compressive for P-channel transistors and tensile for N-channel transistors. Both transistor types can be included on the same integrated circuit.
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申请公布号 |
US7872311(B2) |
申请公布日期 |
2011.01.18 |
申请号 |
US20070857122 |
申请日期 |
2007.09.18 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ORLOWSKI MARIUS K.;VENKATESAN SURESH |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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