发明名称 Method and apparatus for manufacturing stacked-type semiconductor device
摘要 A method of manufacturing a stacked-type semiconductor device, comprises: arranging a plurality of stacked chips obtained by stacking semiconductor chips on a plurality of stages on a support substrate; connecting a semiconductor chip of each stage in each stacked chip and the support substrate by wire while performing heating in units of stacked chips; performing plastic molding of each stacked chip; and separating the stacked chips from each other; an apparatus for manufacturing a stacked-type semiconductor device, comprising divided heater blocks formed under a support substrate on which a plurality of stacked chips obtained by stacking a plurality of semiconductor chips are arranged, the divided heater blocks being formed with respect to the stacked chips, and a heating device to selectively transmit heat to a stacked chip subjected to a wire bonding.
申请公布号 US7871856(B2) 申请公布日期 2011.01.18
申请号 US20050200037 申请日期 2005.08.10
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YOSHIMURA ATSUSHI
分类号 H01L21/44 主分类号 H01L21/44
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