| 摘要 |
Techniques for generating a bias voltage for a class AB amplifier having first and second active transistors. In an exemplary embodiment, a diode-coupled first transistor supports a first current, and the gate voltage of the first transistor is coupled to the gate voltage of the first active transistor. The first current is split into a second current and a first auxiliary current supported by a second transistor, which is biased at a desired common-mode output voltage of the class AB amplifier. The first auxiliary current is further combined with a third current to be supported by a third transistor, with the third transistor configured to replicate the characteristic of the second active transistor. Further techniques are provided for setting the drain voltage of the third transistor to be close to the common-mode output voltage. The techniques described herein may be used to provide a bias voltage for the NMOS and/or PMOS active transistors in a class AB amplifier.
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