发明名称 |
Shielded gate trench FET with an inter-electrode dielectric having a nitride layer therein |
摘要 |
A shielded gate field effect transistor (FET) comprises a plurality of trenches extending into a semiconductor region. A shield electrode is disposed in a bottom portion of each trench, and a gate electrode is disposed over the shield electrode in each trench. An inter-electrode dielectric (IED) extends between the shield electrode and the gate electrode. The IED comprises a first oxide layer and a nitride layer over the first oxide layer.
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申请公布号 |
US7872305(B2) |
申请公布日期 |
2011.01.18 |
申请号 |
US20080146791 |
申请日期 |
2008.06.26 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
HUNT SCOTT L. |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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