THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor hardly influenced by a photocurrent, and high in an on/off ratio.SOLUTION: In this bottom-gate bottom-contact (coplanar) thin film transistor, a channel formation region is superposed on a gate electrode; a first impurity semiconductor layer is provided between the channel formation region and a second impurity semiconductor layer which is in contact with a wiring layer; a semiconductor layer which serves as the channel formation region and the first impurity semiconductor layer preferably contact each other in a region where they overlap the gate electrode; and the first impurity semiconductor layer and the second impurity semiconductor layer preferably contact each other in a region where they do not overlap the gate electrode.