发明名称 |
Low-Leakage Power Supply Architecture for an SRAM Array |
摘要 |
A method of forming an integrated circuit structure includes providing a chip; forming a static random access memory (SRAM) cell including a transistor on the chip; and forming a bias transistor configured to gate a power supply voltage provided to the SRAM cell on the chip. The bias transistor and the transistor of the SRAM cell are formed simultaneously.
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申请公布号 |
US2011007596(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20100775220 |
申请日期 |
2010.05.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE CHENG HUNG;CHEN HSU-SHUN;CHAN WEI MIN;CHOU SHAO-YU |
分类号 |
G11C5/14;G11C11/00;H01L21/8234 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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