发明名称 |
Conductive Via Plug Formation |
摘要 |
Various embodiments of the present invention are generally directed to a method of forming a conductive via plug in a semiconductor device. A first and second metal layer are electrically connected by a via plug that is formed by depositing a tungsten seed layer on a plurality of metal barrier layers within a recess using atomic layer deposition. The recess is then filled with tungsten using chemical vapor deposition.
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申请公布号 |
US2011006436(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20090502220 |
申请日期 |
2009.07.13 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
KHOUEIR ANTOINE;AHN YONGCHUL;MANOS PETER NICHOLAS;HUANG SHUIYUAN;IVANOV IVAN PETROV |
分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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