发明名称 HIGH QUALITY TCO-SILICON INTERFACE CONTACT STRUCTURE FOR HIGH EFFICIENCY THIN FILM SILICON SOLAR CELLS
摘要 A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.
申请公布号 WO2010117548(A3) 申请公布日期 2011.01.13
申请号 WO2010US27002 申请日期 2010.03.11
申请人 APPLIED MATERIALS, INC.;SHENG, SHURAN;CHAE, YONG KEE;KLEIN, STEFAN;AL-BAYATI, AMIR;KUMAR, BHASKAR 发明人 SHENG, SHURAN;CHAE, YONG KEE;KLEIN, STEFAN;AL-BAYATI, AMIR;KUMAR, BHASKAR
分类号 H01L31/042 主分类号 H01L31/042
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