发明名称 COMPOSITE SUBSTRATE WITH CRYSTALLINE SEED LAYER AND CARRIER LAYER WITH A COINCIDENT CLEAVAGE PLANE
摘要 <p>A structure and a method can provide forming a structure for a crystalline seed layer material, such as GaN, on a crystalline carrier material, such as sapphire, aligned such that a common crystal plane exists between the two materials. The common crystal plane may provide for a fracture surface along a cleavage plane that may be oriented to be perpendicular to the top surface of an optoelectronic device as well as perpendicular to a light emission direction.</p>
申请公布号 WO2011004211(A1) 申请公布日期 2011.01.13
申请号 WO2009IB06219 申请日期 2009.07.08
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;ARENA, CHANTAL;WERKHOVEN, CHRISTIAAN 发明人 ARENA, CHANTAL;WERKHOVEN, CHRISTIAAN
分类号 H01S5/323;H01S5/343 主分类号 H01S5/323
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