发明名称 |
COMPOSITE SUBSTRATE WITH CRYSTALLINE SEED LAYER AND CARRIER LAYER WITH A COINCIDENT CLEAVAGE PLANE |
摘要 |
<p>A structure and a method can provide forming a structure for a crystalline seed layer material, such as GaN, on a crystalline carrier material, such as sapphire, aligned such that a common crystal plane exists between the two materials. The common crystal plane may provide for a fracture surface along a cleavage plane that may be oriented to be perpendicular to the top surface of an optoelectronic device as well as perpendicular to a light emission direction.</p> |
申请公布号 |
WO2011004211(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
WO2009IB06219 |
申请日期 |
2009.07.08 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;ARENA, CHANTAL;WERKHOVEN, CHRISTIAAN |
发明人 |
ARENA, CHANTAL;WERKHOVEN, CHRISTIAAN |
分类号 |
H01S5/323;H01S5/343 |
主分类号 |
H01S5/323 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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