| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a compound semiconductor substrate that can produce a compound semiconductor single-crystal substrate of high precision.SOLUTION: The method of producing the compound semiconductor substrate includes an ingot preparation step of preparing an ingot 30 of GaN single crystal as a compound semiconductor, and a cutting step of cutting the ingot 30 with a cutter to form a GaN single crystal substrate. The cutting step is performed while controlling a temperature in a contact portion 32 between the ingot 30 and the cutter to be not more than 160°C. |
