发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To adjust the transfer environment of a substrate in order to prevent contamination of a substrate surface by impurities.SOLUTION: A substrate processing method includes steps of: transferring the substrate from a spare chamber 1 to a processing chamber 2 through a transfer chamber 3; processing the substrate in the processing chamber; and transferring the processed substrate from the processing chamber 2 to the spare chamber 1 through the transfer chamber 3. At each step transferring the substrate, all exhaust systems connected to respective chambers are evacuated by using a vacuum pump, while an inert gas is supplied to all the chambers communicating to respective chambers in which the substrate resides. |
申请公布号 |
JP2011009762(A) |
申请公布日期 |
2011.01.13 |
申请号 |
JP20100177628 |
申请日期 |
2010.08.06 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
TAKANO SATOSHI |
分类号 |
H01L21/205;C23C16/52;H01L21/677 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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