发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR AND SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To adjust the transfer environment of a substrate in order to prevent contamination of a substrate surface by impurities.SOLUTION: A substrate processing method includes steps of: transferring the substrate from a spare chamber 1 to a processing chamber 2 through a transfer chamber 3; processing the substrate in the processing chamber; and transferring the processed substrate from the processing chamber 2 to the spare chamber 1 through the transfer chamber 3. At each step transferring the substrate, all exhaust systems connected to respective chambers are evacuated by using a vacuum pump, while an inert gas is supplied to all the chambers communicating to respective chambers in which the substrate resides.
申请公布号 JP2011009762(A) 申请公布日期 2011.01.13
申请号 JP20100177628 申请日期 2010.08.06
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TAKANO SATOSHI
分类号 H01L21/205;C23C16/52;H01L21/677 主分类号 H01L21/205
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