| 发明名称 |
THIN FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE THIN FILM |
| 摘要 |
Disclosed is a thin film which is used in the production process of a semiconductor device. The thin film contains germanium, silicon, nitrogen and hydrogen.
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| 申请公布号 |
US2011008938(A1) |
申请公布日期 |
2011.01.13 |
| 申请号 |
US20090867823 |
申请日期 |
2009.02.12 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KATO YOSHIHIRO;FUKIAGE NORIAKI |
| 分类号 |
H01L21/8238;H01L21/302;H01L21/336;H01L29/06 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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