METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a substrate processing apparatus that are capable of controlling easily a composition of a metal compound film, and forming a high quality film meeting a usage and forming a high performance film having a low contact resistance by forming a bonding with a base layer.SOLUTION: A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCland NHreacting with the TiClto the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCland a second step of substituting the bonding branch contained in the TiN intermediate film by supplying Hto the wafer, the first step and the second step being performed in this order.