发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a semiconductor element which has favorable characteristics.SOLUTION: A manufacturing method includes steps of: forming a first conductive layer which functions as a gate electrode on a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer on the first insulating layer so that the semiconductor layer partially overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer. |
申请公布号 |
JP2011009697(A) |
申请公布日期 |
2011.01.13 |
申请号 |
JP20100048937 |
申请日期 |
2010.03.05 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
OHARA HIROKI;SASAKI TOSHINARI |
分类号 |
H01L21/336;H01L21/20;H01L21/28;H01L29/786;H01L51/50;H05B33/10;H05B33/14 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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