发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device including a semiconductor element which has favorable characteristics.SOLUTION: A manufacturing method includes steps of: forming a first conductive layer which functions as a gate electrode on a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer on the first insulating layer so that the semiconductor layer partially overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer.
申请公布号 JP2011009697(A) 申请公布日期 2011.01.13
申请号 JP20100048937 申请日期 2010.03.05
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 OHARA HIROKI;SASAKI TOSHINARI
分类号 H01L21/336;H01L21/20;H01L21/28;H01L29/786;H01L51/50;H05B33/10;H05B33/14 主分类号 H01L21/336
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