| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which large distortion can be generated in a channel and control can be easily performed.SOLUTION: On a semiconductor substrate 1, a laminate including an insulating film 3, a polycrystalline silicon film 4 and an amorphous silicon film 5 is formed in a plane shape of a gate electrode. A side wall 6 is formed on lateral sides of the polycrystalline silicon film 4 and amorphous silicon film 5. A p-type impurity is introduced in a surface of the semiconductor substrate 1 using the side wall 6 as a mask to form an impurity introduction region 7. A groove 8 is formed on a surface of the impurity introduction region 7 using the side wall 6 as the mask. An SiGe layer 9 is selectively grown in the groove 8. The amorphous silicon film 5 is selectively removed to expose the polycrystalline silicon film 4. A conductive layer 11 is formed on the polycrystalline silicon film 4. |
