发明名称 SEMICONDUCTOR APPARATUS MANUFACTURING METHOD AND SEMICONDUCTOR APPARATUS
摘要 Provided is a semiconductor apparatus which may check a state of connection of a penetrating electrode in a semiconductor substrate with ease. A semiconductor apparatus manufacturing method includes: forming in a semiconductor substrate at least three kinds of the through-holes each having a large area, a middle area, and a small area of openings; forming a conductive layer on an inner surface of the at least three kinds of the through-holes having different areas of the openings to form the penetrating electrodes; and measuring resistance values of the penetrating electrode including the through-hole having the large area of the opening and the penetrating electrode including the through-hole having the small area of the opening among the three kinds of the penetrating electrodes to determine states of connection of the penetrating electrodes.
申请公布号 US2011006303(A1) 申请公布日期 2011.01.13
申请号 US20090922530 申请日期 2009.03.17
申请人 CANON KABUSHIKI KAISHA 发明人 MUTA TADAYOSHI
分类号 H01L23/58;H01L21/66 主分类号 H01L23/58
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