| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element, wherein the external light emission efficiency is improved.SOLUTION: The semiconductor light emitting element includes a substrate 10, processed layers 18 which are arranged on the substrate 10 and subjected to nanosize processing, an n-type semiconductor layer 12 which is arranged on the substrate 10 while being held between the processed layers 18 and on the processed layers 18 and is doped with n-type impurities, an active layer 13 arranged on the n-type semiconductor layer 12, and a p-type semiconductor layer 14 which is arranged on the active layer 13 and doped with p-type impurities. |
