| 摘要 |
PROBLEM TO BE SOLVED: To achieve both, for example, a securement of high-speed performance of an HP transistor in a core part and, for example, an improvement of a gate withstand voltage and a reduction of a gate leakage current in an I/O transistor and an LP transistor, in a semiconductor device having a plurality of gate insulating films on the same substrate.SOLUTION: The semiconductor device is equipped with a plurality of gate insulating films formed on a semiconductor substrate 11. Out of the plurality of gate insulating films, a gate insulating film with the thinnest film thickness in an HP transistor forming region 1C comprises a silicon oxide film 20, and remaining gate insulating films in an I/O transistor forming region 1A and an LP transistor forming region 1B comprise silicon oxide nitride films 16 and 17, respectively. |
