| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal in which a structural defect arises owing to the reduction in airtightness of an adhesive layer is suppressed.SOLUTION: A coated layer 40 is formed on a coated surface 30a of a seed crystal 30 using a coating agent containing a phenol resin and a silicon carbide grain 80, and an adhesive layer 50 interposed between the coated layer 40 and a seed crystal mount 10b is formed using adhesives. The thickness of the coated layer 40 is 5 to 20 μm, and the coated layer 40 contains the silicon carbide grain 80 in an amount of 1 to 20% by volume. |
