| 摘要 |
The present invention is related to a method for growing a layer of a mono-crystalline material on a substrate comprising loading a substrate having an exposed area made of a first mono-crystalline material in a process chamber, supplying a beam of neutral species of a second material towards the substrate in the presence of a diffusion limiting gas, such that the pressure in the process chamber is between 1×10−6 torr and 1×10−4 torr, so that the neutral species of the second material are adsorbed on the exposed area, thereby growing a mono-crystalline layer of said second material overlying and in contact with the first mono-crystalline material wherein said diffusion limiting gas is a non-reactive gas.
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