Semiconductor Device with Surge Current Protection

摘要

A power device includes an active area having at least two switchable regions with different threshold voltages.

主权项

1. A power device, comprising:
a semiconductor substrate comprising a plurality of switchable cells defining an active area of the power device, each of the switchable cells comprising an emitter region, and a collector region; an emitter metallization in ohmic contact with the emitter region of the switchable cells; and a collector metallization in ohmic contact with the collector region of the switchable cells; wherein the active area comprises first switchable regions and second switchable regions different to the first switchable region, each of the first and second switchable regions comprising at least a portion of one or more of the switchable cells; wherein the first switchable regions have a first threshold in the range of 5 V to 10 V defining a device threshold at which the power device becomes conductive for continuously conducting a rated current of the power device between the emitter metallization and the collector metallization; and wherein the second switchable regions have a second threshold in the range of 15 V to 25 V defining a surge threshold of the power device at which the power device becomes operable to conduct a surge current between the emitter metallization and the collector metallization, wherein the surge current of the power device is at least five times as large as the rated current of the power device.