| 摘要 |
PROBLEM TO BE SOLVED: To improve optical taking-out efficiency of a group III nitride semiconductor light-emitting element.SOLUTION: Dot-like grooves 108 are formed in a region with no n-electrode 107 on the n-electrode 107 side surface of an n-type layer 106 in a light-emitting element 100. The groove 108 penetrates the n-type layer, an active layer, and a p-type layer and has a depth reaching an etching stopper layer 109. The grooves 108 are arranged in matrix in the region where no n-electrode 107 is formed. The light incident on the side surface of the groove 108 is efficiently radiated outside, and optical taking-out efficiency is improved with the configuration of the light-emitting element 100. |
