| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of processing a semiconductor wafer, capable of thinning a wafer while evenly keeping a thickness of the wafer without corroding electrodes, even if a through-electrode is exposed when a supporting member is partitioned.SOLUTION: The method of processing the semiconductor wafer having a plurality of embedded electrodes embedded by a depth of more than or equal to the finished thickness of the semiconductor device from a semiconductor circuit, includes a step of forming division grooves having a depth of more than or equal to the finished thickness of the semiconductor device along a division-scheduled line, a step of producing a wafer by adhering the supporting member to the semiconductor wafer; and a step of forming a deterioration layer in the supporting member by irradiating a laser beam the division-scheduled line. The method of processing the semiconductor wafer also includes a step of fracturing the supporting member of an adhered wafer along the deterioration layer formed in the supporting member by applying external force to the adhered wafer. |
