发明名称 ASSISTING WRITE OPERATION TO DATA STORAGE CELL
摘要 PROBLEM TO BE SOLVED: To provide a data store achieving matched write to a storage cell without excessively increasing additional circuits, and without excessively affecting stability of other neighboring storage cells, and a method of storing data.SOLUTION: A data store 10 includes: a voltage source 30 for supplying power to a data store, which outputs a high voltage level and a low voltage level; a write assisting circuit 40 which is arranged between the voltage source 30 and at least one storage cell 22 and which is responsive to a pulse signal to provide a discharge path between the high voltage level and the low voltage level, and generates an intermediate voltage level lower than the high voltage level for a period dependent on the width of the pulse signal, wherein a feedback loop receives low intermediate voltage level as the high voltage level for a period determined by the pulse width and the high voltage level at other times; and a pulse generating circuit 50 for generating a pulse signal.
申请公布号 JP2011008909(A) 申请公布日期 2011.01.13
申请号 JP20100146200 申请日期 2010.06.28
申请人 ARM LTD 发明人 YEUNG GUS
分类号 G11C11/413;G11C11/41 主分类号 G11C11/413
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