| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a bit contact which settles an issue of insufficient separation margin on resist pattern exposure as well as local variations in dry-etching process to suppress increase in the number of steps and laboriousness.SOLUTION: The manufacturing method of a semiconductor device includes a step of forming a word wiring that crosses with an active region on a semiconductor substrate that contains an active region, a diffusion layer region forming step, a step of forming a first insulating film up to the formation height of bit line, a step of forming a groove pattern for exposing a semiconductor substrate surface by etching the first insulating film with a pattern containing a linear opening in the extension of the active region on the first insulating film as a mask, a step of embedding a conductive film in the groove pattern, a step of forming a mask pattern that passes over the bit contact formation part on the first insulating film, and a step, with the mask pattern as a mask, for removing the first insulating film and the conductive film by such amount as an upper layer insulating film of the word wiring is exposed, to separate the bit contact from other contact. |
