SOLID STATE IMAGING ELEMENT

摘要

A floating diffusion (FD) region (13) is formed at the edge of a light receiving surface of an embedded photodiode, and with a transfer gate electrode (12) therebetween. A first region (111), with a radially extending section centred on the FD region (13), and a second region (112), located to the outside of said first region, are created in the roughly fan-shaped light receiving surface. Impurities of the same conductivity as a signal electrical charge collected in the first region (111) are introduced, forming, according to the three-dimensional electric field effect, an electric field, which directs the signal electrical charge from the radially extending section towards the centre. As a result, the electrical charge transfer time is reduced. Additionally, because a circuit element for a subsequent stage can be disposed adjacent to the FD region (13), the parasitic capacitance of the FD region can be reduced and a highly sensitive element can be obtained. Thus, it is possible to improve the detection sensitivity and S/N of a solid state imaging element for very fast imaging (at a million frames per second and above), without losing imaging speed.