发明名称 WIDE GAP OXIDE SEMICONDUCTOR AND ULTRAVIOLET SENSOR USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a low cost ultraviolet sensor not sensitive to visible light and an ultraviolet ray of UV-A.SOLUTION: The wide gap oxide semiconductor and the ultraviolet sensor using it are configured such that a light-absorbing layer has a bandgap of at least 3.6 eV by adding aluminum oxide to zinc oxide. Thus, the ultraviolet sensor, which does not absorb light of long wavelengths such as visible light and an ultraviolet ray of UV-A and is sensitive to only ultraviolet rays of UV-B and UV-C, can be obtained at low cost.
申请公布号 JP2011009293(A) 申请公布日期 2011.01.13
申请号 JP20090148941 申请日期 2009.06.23
申请人 ALPS ELECTRIC CO LTD 发明人 TAMURA MANABU;HATAUCHI TAKASHI;ODAJIMA SATOSHI
分类号 H01L31/0264;G01J1/02 主分类号 H01L31/0264
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