| 摘要 |
PROBLEM TO BE SOLVED: To provide an indium-oxide-based sputtering target with which a transparent electroconductive oxide film having low resistance and a high refractive index can be industrially produced by a direct-current sputtering technique.SOLUTION: The sputtering target is obtained by sintering a compact formed of oxides which include indium oxide as a main raw material and 5.2-9.2 mass% in total of tantalum oxide and titanium oxide in which the mass ratio of the titanium oxide/tantalum oxide is 0.022-0.160, in an atmosphere containing oxygen at 1,530-1,630°C. Thus obtained sputtering target has a relative density of 97% or more and a specific resistance of 5×10Ω cm or less. The transparent electroconductive oxide film formed with the use of the sputtering target has a specific resistance of 5×10Ω cm or less, a refractive index of light in a visible region of 2.0 or more and a transmittance of 96% or more. |
