| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a reliable semiconductor device efficiently.SOLUTION: This semiconductor device has: a plurality of interlayer insulating films 16, 19, 22 stacked on a semiconductor substrate 1; a pad 25 which is formed on uppermost faces of the plurality of interlayer insulating films 16, 19, 22, and has a probe contact region to which a probe is applied from the outside; wirings 12, 15, and 18 of a plurality of layers formed between the plurality of interlayer insulating films 16, 19, 22; and a stress relaxation 42 which is formed in a region beneath the probe contact region of the pad 25, and has a conductive pattern having at least one of a nonlinear slit and a hole charged with the interlayer insulating film 22. |
