VERTICAL-STRUCTURE GALLIUM-NITRIDE-BASED LIGHT EMITTING DIODE ELEMENT, AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a vertical-structure gallium-nitride-based light emitting diode element, and a manufacturing method of the element.SOLUTION: The vertical-structure gallium-nitride-based light emitting diode element are manufactured through processes of: forming a light emitting structure of the sequence lamination comprising an n-type gallium-nitride-based semiconductor layer, an active layer, and a p-type gallium-nitride-based semiconductor layer on a substrate; etching the light emitting structure and dividing it into unit-size LED elements; forming a p-type electrode on the divided light emitting structure; filling a space between the divided light emitting structures with non-conductive materials; forming a metal seed layer on the resultant structure; forming a first plated layer on the metal seed layer, except for the intermediate regions interposed between the light emitting structures; forming second plated layers on the surface of the first plated layer and on the metal seed layer interposed between the first plated layers; separating the substrate from the light emitting structure; removing the non-conductive material interposed between the light emitting structures exposed by the separated substrate; forming an n-type electrode on the n-type gallium-nitride-based semiconductor layer; and removing the portions of the metal seed layer and the second plated layer which are interposed between the light emitting structures.