| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device and a method of programming the same, in which program time can be decreased by determining the propriety of program fail through a verification line, without adding a circuit to a page buffer of a nonvolatile memory element, and at the same time, by executing a cache program and intelligence-type verification.SOLUTION: The nonvolatile memory device includes a page buffer section, including a plurality of page buffers coupled to any one out of bit lines; a fail-bit counting section coupled to a verification line to which a second latch is coupled commonly and counting the number of fail bits, based on a current of the verification line; and a control section which is coupled to the page buffer section and the fail bit counting section, in which data for the next program is input to a first latch, propriety of correction of errors is determined, based on the number of fail bits counted by the fail-bit counting section, program operation by the determined result is controlled. |
