发明名称 |
SEMICONDUCTOR WAFER, METHOD OF MANUFACTURING A SEMICONDUCTOR WAFER, AND ELECTRONIC DEVICE |
摘要 |
The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that includes an open portion reaching the silicon wafer and having an aspect ratio of√3/3 or more; a seed compound semiconductor crystal that is formed in the open portion and that protrudes beyond a surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface.
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申请公布号 |
US2011006368(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20090920457 |
申请日期 |
2009.02.27 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
HATA MASAHIKO;TAKADA TOMOYUKI |
分类号 |
H01L29/786;H01L21/20;H01L29/30 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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