发明名称 SEMICONDUCTOR WAFER, METHOD OF MANUFACTURING A SEMICONDUCTOR WAFER, AND ELECTRONIC DEVICE
摘要 The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that includes an open portion reaching the silicon wafer and having an aspect ratio of√3/3 or more; a seed compound semiconductor crystal that is formed in the open portion and that protrudes beyond a surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface.
申请公布号 US2011006368(A1) 申请公布日期 2011.01.13
申请号 US20090920457 申请日期 2009.02.27
申请人 SUMITOMO CHEMICAL COMPANY, LIMITED 发明人 HATA MASAHIKO;TAKADA TOMOYUKI
分类号 H01L29/786;H01L21/20;H01L29/30 主分类号 H01L29/786
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