发明名称 |
NONVOLATILE STORAGE DEVICE AND METHOD FOR WRITING INTO MEMORY CELL OF THE SAME |
摘要 |
Provided is a nonvolatile storage device (200) capable of stably operating without increasing a size of a selection transistor included in each of memory cells. The nonvolatile storage device (200) includes: a semiconductor substrate (301) which has a P-type well (301a) of a first conductivity type; a memory cell array (202) which includes memory cells (M11) or the like each of which includes a variable resistance element (R11) and a transistor (N11) that are formed above the semiconductor substrate (301) and connected in series; and a substrate bias circuit (220) which applies, to the P-type well (301a), a bias voltage in a forward direction with respect to a source and a drain of the transistor (N11), when a voltage pulse for writing is applied to the variable resistance element (R11) included in the selected memory cell (M11) or the like.
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申请公布号 |
US2011007553(A1) |
申请公布日期 |
2011.01.13 |
申请号 |
US20090865193 |
申请日期 |
2009.10.16 |
申请人 |
TAKAGI TAKESHI;MURAOKA SHUNSAKU;IIJIMA MITSUTERU;KAWAI KEN;SHIMAKAWA KAZUHIKO |
发明人 |
TAKAGI TAKESHI;MURAOKA SHUNSAKU;IIJIMA MITSUTERU;KAWAI KEN;SHIMAKAWA KAZUHIKO |
分类号 |
G11C11/00;G11C7/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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